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| 2SK2879-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 500V 0,38 20A 150W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch 150C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg Rating 500 20 80 30 20 761 150 150 -55 ~ +150 L=34.9mH,Vcc=50V > Equivalent Circuit Unit V A A V A mJ W C C - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V Tch=25C VGS=0V Tch=125C VGS=30V VDS=0V ID=10A VGS=10V ID=10A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=20A VGS=10V RGS=10 Tch=25C L = 3,49mH IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C Min. 500 2,5 Typ. 3,0 10 0,2 10 0,33 15 2200 330 140 20 160 130 105 1,1 650 10,0 Max. 3,5 500 1,0 100 0,38 3300 500 210 30 240 200 160 1,7 7,5 20 Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C Symbol R th(ch-c) R th(ch-a) Test conditions channel to case channel to air Min. Typ. Max. 0,83 35,0 Unit C/W C/W N-channel MOS-FET 500V 0,38 20A 150W Typical Output Characteristics ID=f(VDS); 80s pulse test; TC=25C 2SK2879-01 FAP-IIS Series Drain-Source-On-State Resistance vs. Tch RDS(on) = f(Tch): ID=10A; VGS=10V > Characteristics Typical Transfer Characteristics ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C ID [A] 1 RDS(ON) [] 2 ID [A] 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source-On-State-Resistance vs. ID RDS(on)=f(ID); 80s pulse test;TC=25C Typical Forward Transconductance vs. ID gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch); ID=1mA; VDS=VGS RDS(ON) [] gfs [S] 5 VGS(th) [V] 4 6 ID [A] ID [A] Tch [C] Typical Capacitances vs. VDS C=f(VDS); VGS=0V; f=1MHz Typical Gate Charge Characteristic VGS=f(Qg): ID=20A; Tc=25C Forward Characteristics of Reverse Diode IF=f(VSD); 80s pulse test; VGS=0V C [F] VDS [V] VGS [V] IF [A] 7 8 9 VDS [V] Qg [nC] VSD [V] Avalanche Energy Derating Eas=f(starting Tch): Vcc=50V; IAV=20A Safe operation area ID=f(VDS): D=0,01, Tc=25C Zth(ch-c) [K/W] Transient Thermal impedance Zthch=f(t) parameter:D=t/T Eas [mJ] 10 ID [A] 12 Starting Tch [C] VDS [V] t [s] This specification is subject to change without notice! N-channel MOS-FET 500V 0,38 20A 150W 2SK2879-01 FAP-IIS Series > Characteristics Power Dissipation PD=f(TC) 125 100 75 PD / PDmax [%] 50 25 0 0 0 0 0 TC [C] 0 0 0 This specification is subject to change without notice! |
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